China's CXMT Claims Memory Breakthrough Ahead of Samsung, Hynix

Hyperdash News10/13/2026 05:15 UTCEquities

China's ChangXin Memory Technologies (

ChangXin Memory Technologies) announced "key progress" on a new memory chip architecture. This development involves a "4F square" design, which aims to increase storage density by fitting more cells onto a single chip.

ChangXin Memory Technologies plans to release a new server-memory product based on this structure by the end of 2026.

This innovation could intensify competition in the memory chip market, where rivals like Samsung Electronics and SK Hynix are also developing similar technologies. The breakthrough follows

ChangXin Memory Technologies's production of China's first lower-power Double Data Rate 5 (LPDDR5) DRAM chip in November 2023, a move to reduce reliance on imported products. On Hyperdash,

ChangXin Memory Technologies is up +0.02% since the news broke.

Sources

Bloomberg SCSCMP

Reuters SESeoul Economic Daily YOYonhap TRTrendForce

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